What is ReRAM technology?

ReRAM (Resistive RAM) Weebit’s Resistive Random Access Memory (ReRAM or RRAM) is an emerging Non-Volatile Memory (NVM) technology that addresses the need for higher-performance, more reliable, lower-power, and more cost-effective NVM in a wide range of electronic products.

Why ReRAM?

Among all the emerging memory technology candidates, RRAM has significant advantages such as easy fabrication, simple metal-insulator-metal (MIM) structure, excellent scalability, nanosecond speed, long data retention, and compatibility with the current CMOS technology, thus offering a competitive solution to future …

How does ReRAM work?

ReRAM specifically works by using the method of creating physical defects in a layer of oxide material. These defects are called oxygen vacancies, and the ReRAM works like a semiconductor but with oxygen ions; these vacancies represent two values in a binary system, instead of a semiconductors’ electrons and holes.

Where is ReRAM used?

Applications of ReRAM Memories are widely used today in consumer electronics, computers, smartphones, tablets and enterprise storage.

Who makes ReRAM?

Sandisk. SanDisk, owned by Western Digital is a leading Multinational flash memory developer that provides flash memory storage solutions for data centers and mobile devices. The company also develops RRAM memory technologies.

Can ReRAM replace DRAM?

ReRAM (Resistive RAM) is a hybrid technology that may someday replace NAND flash and DRAM in the storage world because of its speed and density, explained Marc Kennis, principal at Sydney, Australia-based TMT Analytics. He said ReRAM is non-volatile like flash memory but about as fast as DRAM.

What is STT-RAM?

Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance.

What is STT RAM?

What’s next after flash memory?

The strongest contender to take over from flash is resistive random-access memory (RRAM), where storage devices flip between two resistance levels to store binary data. Compared with flash, RRAM offers small devices, much faster switching speed and at least a 10x improvement in wear life.

Will DRAM be replaced?

Replacing DRAM is a major challenge for the industry, not only because DRAM today accounts for over 50% of the current market demand for memory (Yole Development, 2020). Forecasts also suggest the need for this type of low cost, high density DRAM by 2025 will continue to grow and exceed $100Bn.

What’s new in ReRAM technology?

Fujitsu and Panasonic are jointly ramping up a second-generation ReRAM device. In addition, Crossbar is sampling a 40nm ReRAM technology, which is being made on a foundry basis by China’s SMIC. And not to be outdone, TSMC and UMC recently put ReRAM on their roadmaps and are developing the technology for customers within the next year or so.

Is there a PCM product for Micron RRAM?

Micron already had a PCM product, but yanked it off later. One problem is the very high RESET current, or RESET voltage much larger than SET voltage. Other unipolar RRAMs, they don’t have the high RESET current, but their RESET is quite slow, much slower than SET.

What is ReRAM memory and how does it work?

“ReRAM is a solution for cost-sensitive applications, such as wearables and IoT devices,” said Yau Kae Sheu, assistant vice president of embedded nonvolatile memory at UMC. “ReRAM is a fit for some low-end MCUs and consumer products with a lower memory density requirement.”

Can oxram be used for neuromorphic computing?

“OxRAM has that property. The resistance can be changed to meet the needs of neuromorphic computing.” A neuromorphic system, however, would require a cascade of multi-stacked ReRAM devices. As stated above, a single ReRAM device is a difficult technology to control.